Indian Journal of Pure and Applied Physics

                                                                            Total visitors: 2,213  since 09-12-05

 ISSN: 0019-5596

CODEN: IJOPAU 43 (12) 895-1008

VOLUME  43

NUMBER 12

DECEMBER 2005

CONTENTS

Review Article

 

Carbon nanotubes field effect transistors: A review

P A Alvi*, K M Lal, M J Siddiqui & S Alim H Naqvi

899

Atomic and Molecular Physics

 

Molecular interaction studies of acrylic esters with alcohols

P Sivagurunathan*, K Dharmalingam & K Ramachandran

905

Density functional theory and FTIR spectroscopic study of carboxyl group

Medhat Ibrahim*, Abdallah Nada & Diaa Eldin Kamal

911

Excitation energy transfer between Eu3+ and Tm3+ ions in zinc phosphate glass

B C Joshi* & Charu Ch Dhondiyal

918

Electromagnetism, Optics, Acoustics, Heat Transfer, Classical Mechanics and Fluid Dynamics

 

Electrochemical and optical studies of conjugated polymers for three primary colours

Aparna Misra, Pankaj Kumar, Ritu Srivastava, S K Dhawan, M N Kamalasanan*& Subhas Chandra

921

Mechanical, dielectric and photoconducting properties of a novel non-linear optical crystal

K Rajarajan, S Selvakumar, Ginson P Joseph, M Gulam Mohamed,I Vedha Potheher & P Sagayaraj*

926

Physics of Gases, Plasmas and Electric Discharges

 

Potential-variation of a time effect on the average of counts in argon at a low pressure subjected to low frequency silent electric discharges

S V Salvi* & Sushama S Pimpale

931

Condensed Matter: Structure, Mechanical and Thermal Properties

 

High pressure phase transformation and elastic behaviour of ZnX semiconducting compound

Dinesh Varshney*, R Kinge, P Sharma, N Kaurav & R K Singh

939

Soft hydrothermal synthesis, morphology and characterization of disodium nickel pyrophosphate crystals: Na2NiP2O7

M J Mahesh, G S Gopalakrishna* & K G Ashamanjari

952

Information entropy of isospectral Pöschl-Teller potential

Anil Kumar

958

Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties

 

Electrical and optical properties of vacuum deposited ZnPc and CoPc thin films and application of variable range hopping model

K R Rajesh* & C S Menon

964

Dielectric tensor theory of electric field gradient in dilute transition metal based alloys: Application to vanadium alloys

B Pal* & J Singh

972

Study of depression of critical temperature of praseodymium doped high Tc cuprates

R Gill* & P Singh

977

Interdisciplinary Physics and Related Areas of Science and Technology

 

Comparative study of power MOSFET device structures

Rakesh Vaid* & Naresh Padha

980

Annual Author Index

993

Annual Keyword Index

998

List of Experts

1005

__________

*The corresponding author has been indicated by (*) mark in case of papers with more than one author.

 

 

 

 

 

Indian Journal of Pure & Applied Physics

Vol. 43, December 2005, pp. 899-904

 

 Carbon nanotubes field effect transistors : A review

P A Alvi1 , K M Lal1, M J Siddiqui2 & S, Alim H Naqvi1

1 Department of Applied Physics, Z H College of Engineering and Technology, Aligarh Muslim University, Aligarh 202 002

2Department of Electronics Engineering, Z H College of Engineering and Technology, Aligarh Muslim University, Aligarh 202 002

*E -mail: parvez_amu@indiatimes.com

Received 25 February 2005; revised 8 October 2005; accepted 18 October 2005

Carbon nanotubes field effect transistors (CNTFETs) are one of the most promising candidates for future nanoelectronics. In this paper, the review of CNTFETs is presented. The structure, operation and the characteristics of carbon nanotubes metal-insulator-semiconductor capacitors have been discussed. The operation and dc characteristics of CNTFETs have been presented. In future, we expect the performance of CNTFETs will be better by improving CNT quality and on optimizing device structures.

Keywords: Carbon nanotubes, Field effect transistors, Nanoelectronics

 

IPC Code: H01F 41/30, G1221/06

 

 

 

Indian Journal of Pure & Applied Physics

Vol. 43, December 2005, pp. 905-910

 

Molecular interaction studies of acrylic esters with alcohols

P Sivagurunathan*, K Dharmalingam & K Ramachandran

Department of Physics, Annamalai University, Annamalai Nagar, Tamilnadu 608 002

Received 9 March 2005; revised 22 August 2005; accepted 27 September 2005

Hydrogen bonding between alcohols and acrylic esters in benzene has been studied by FTIR spectroscopic method. Utilizing Nash method the formation constant of the 1:1 complexes has been calculated. The formation constant and free energy change values vary with alcohol and ester chain length, which suggests that the proton donating ability of alcohols is in the order: 1-propanol < 1-butanol < 1-pentanol and the accepting ability of acrylic esters is in the order: methyl methacrylate < ethyl methacrylate < butyl methacrylate.

Keywords: Molecular interactions, FTIR spectroscopy, Esters, Alcohols, Hydrogen bonding

IPC Code: G01J3/28, C07C231/00

 

 

Indian Journal of Pure & Applied Physics

Vol. 43, December 2005, pp. 911-917

 

  

Density functional theory and FTIR spectroscopic study of carboxyl group

Medhat Ibrahim1, Abdallah Nada2, & Diaa Eldin Kamal1

1Spectroscopy Department, National Research Center, Dokki, Cairo, Egypt

2Cellulose and Paper Department, National Research Center, Dokki, Cairo, Egypt

Received 29 March 2005;revised 7 September 2005;accepted 30 September 2005

Both molecular modelling and FTIR have been used to study carboxyl group among acetic acid, potassium and sodium acetate, glycine, sodium salicylate, salicylic acid and cellulose acetate. Molecular modelling was used to study formic acid, carboxylic acids R-COOH, monovalent alkali carboxylate CH3COO-M, alanine, benzoic acid as well as naphthalene. Each structure was optimized using VWN/DZVP then vibrational spectra were further calculated at the same level of theory. The comparison between both calculated and experimental spectra showed good agreement with each other. Except for formic acid and free carboxyl, the characteristic band is shifted towards lower frequency.

Keywords: FTIR spectroscopy, Density functional theory, Carboxyl group, Cellulose acetate

 

IPC Code: G01J3/28

 

 

Indian Journal of Pure & Applied Physics

Vol. 43, December 2005, pp. 918-920

 

 

Excitation energy transfer between Eu3+ and Tm3+ ions in zinc phosphate glass

B C Joshi & Charu Ch Dhondiyal

Department of Physics, Kumaun University, Almora Campus, Almora (Uttaranchal)

Received 14 July 2005; accepted 3 October 2005

Non-radiative energy transfer from Eu3+ to Tm3+ has been studied by observing the steady state emission of Eu3+ with varying concentration of Tm3+ in zinc phosphate glass. It has been observed that Eu3+ ion emission intensity decreases with increasing Tm3+ concentration resulting in a non-radiative energy transfer from Eu3+ to Tm3+ whereas energy transfer from Tm3+ to Eu3+ was not observed between donor and acceptor ions. This energy transfer has been explained on the basis of cross-relaxation of energy. The energy transfer mechanism and other parameters related to energy transfer between Eu3+ and Tm3+ have been computed.

Keywords: Excitation energy, Non-radiative energy transfer, Phosphate glass, Fluorescent spectra

IPC Code:G01J3/30

 

 

Indian Journal of Pure & Applied Physics

Vol. 43, December 2005, pp. 921-925

 

 

Electrochemical and optical studies of conjugated polymers for
three primary colours

Aparna Misra, Pankaj Kumar, Ritu Srivastava, S K Dhawan, M N Kamalasanan* & Subhas Chandra

OLED Lab, Polymeric & Soft Materials Section, National Physical Laboratory, Dr K S Krishnan Road, 

New Delhi 110 012

* Email: mnkamal@mail.nplindia.ernet.in

Received 29 April 2005; revised 20 September 2005; accepted 29 September 2005

The Cyclic Voltammetry investigation and optical properties of some of the commonly used conjugated polymers for the fabrication of organic LEDs, like poly [2-methoxy 5-(2¢-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV), poly [2,3-bis (2-ethylhexyloxy)1,4-phenylenevinylene] (BEH-PPV) and poly[(9,9¢-di(2¢-ethylhexyl) fluoren-2,7-yleneethynylene] (PFE) for three principal emission colours red, green and blue, respectively have been reported. Both oxidation and reduction potentials of polymers were determined under the same experimental conditions to estimate the ionization potential (Ip: energy of Highest Occupied Molecular Orbital) and electron affinity (Ea: energy of Lowest Unoccupied Molecular Orbital). The optical band gaps of the polymers were obtained from their optical absorption spectra. A comparative study of the electrochemical and optical bandgap of the polymers has been made. The photoluminescence (PL) of the polymers has also been studied.

Keywords: HOMO, LUMO, Optical band gap, Electrochemical band gap, Cyclic Voltammetry

IPC Code: C08J, B23H3/00   

 

Indian Journal of Pure & Applied Physics

Vol. 43, December 2005, pp. 926-930

 

Mechanical, dielectric and photoconducting properties of a novel non-linear optical crystal

K Rajarajan, S Selvakumar, Ginson P Joseph, M Gulam Mohameda
I Vedha Potheher & P Sagayaraj

Department of Physics, Loyola College, Chennai 600 034

aDepartment of Physics, The New College, Chennai 600 014

Received 19 April 2005;revised 15 July 2005; accepted 1 September 2005

Non-linear optical single crystals of cadmium mercury tetrathiocyanate dimethylsulphoxide [CdHg(SCN)4(H6C2OS)2], (CMTD) were conveniently grown from a DMSO-water mixed solvent by slow solvent evaporation technique. The crystals were characterized by single crystal X-ray diffraction and FT IR. The grown crystals were also subjected to microhardness, dielectric and photoconductivity studies. The microhardness studies indicate that the Vickers hardness number of the crystal decreases with increase in applied load. The dielectric response of the crystal with varying frequencies is studied and reported. The photoconductivity studies confirm that the title compound has negative photoconducting nature.

Keywords: Non-linear optical crystals, Semi-organic, Solvent evaporation method, Dielectric constant, Photoconductivity

IPC Code: C30B

 

 

Indian Journal of Pure & Applied Physics

Vol. 43, December 2005, pp. 931-938

 

Potential-variation of a time effect on the average of counts in argon at a low pressure subjected to low frequency silent electric discharges

S V Salvi & Sushama S Pimpale

Department of Physics, The Institute of Science, Mumbai 400 032

Received 28 February 2005; revised 3 October 2005; accepted 18 October 2005

A series of observations at a definite kV (rms) was taken for the time-variation of discharge counts in which the arithmetic mean of counts in dark (åCD)/n; in light (åCL)/n and their associated net effect (åDC)/n [= (åCL)/n - (åCD)/n] of irradiation were calculated; after that the discharge tube (1) was short aged for 5 min at 2.45 kV (rms) and the discharge was then discontinued; re-applying the same potential kV (rms) to the same tube, the variation with time of exposure to discharge of counts was again recorded and (åDC)/n re-determined as previously. It has now been observed that almost always (åDC)/n shows a greater value in the earlier that in the latter series. Thus, several series of experiments were carried out at different values for the applied potential in each of which (åDC)/n was measured as a function of the applied potential increased progressively, at a constant window width of 0.07 kV(rms), to a maximum. Similarly, the results in a series of comparative measurements for two discharge tubes have been reported. It was observed that the increase of (åDC)/n as a result of ageing, i.e. due to previous exposure to the discharge, was very appreciably larger in the case of a discharge tube (1) which had been rendered comparatively insensitive in regard to the average effect of irradiation, than a fresh one which showed the familiar behaviour of an irradiation. The average light effect (åDC)/n decreased with ageing and disappeared finally. It revived to its original value after allowing a period of rest of 24 hr. Threshold voltage, Vg, in aged tube was appreciably smaller than that in the freshly prepared one. This is ascribed to a lowering of the electrode surface work function due to ionic bombardment under discharge. + (åDC)/n inverted to –(åDC)/n with ageing and then decreased. The increase in + (åDC)/n with ageing is attributed to an enhanced photo-electron emission caused by the decrease in the work function. The decrease in –(åDC)/n is ascribable to the deconditioning of the adsorption like boundary layer formed during discharge. The results show that –(åDC)/n is associated with a decrease in ionic mobility. This lends support to the Joshi¢s theory for the mechanism of –(åDC)/n, n being the total number of readings taken between counts and exposure –time at each voltage.

Keywords: Silent discharge, Ageing, Mobility, Average light-effect, Penning-effect, Budde-effect

IPC CODE: G01R33/14

 

 

 

 

Indian Journal of Pure & Applied Physics

Vol. 43, December 2005, pp. 939-951

 

High pressure phase transformation and elastic behaviour of ZnX semiconducting compound

Dinesh Varshney, R Kinge, P Sharma, N Kaurav & R K Singh*

School of Physics, Vigyan Bhawan, Devi Ahilya University, Indore 452 017

*Lakshmi Narayan College of Technology, Raisen Road, Bhopal 462 021

Received 28 February 2005; accepted 14 September 2005

An effective interionic interaction potential to investigate the pressure induced phase transitions from zinc blende (B3) to rock salt (B1) structure and anharmonic properties in ZnX [X = Se, S, Te] semiconductors has been presented. The elastic constants, including the long range Coulomb, Van der Waals (vdW) interaction and the short-range repulsive interaction of up to second-neighbour ions within the Hafemeister and Flugare approach, are derived as a first step. Both of the ions are polarizable, therefore the Slater-Kirkwood variational method is employed to estimate the vdW coefficients. It is inferred that vdW interaction is effective in obtaining the thermodynamical parameters such as the Debye temperature, Gruneisen parameter, thermal expansion coefficient and the compressibility. The major volume discontinuity in the pressure-volume phase diagram representing the structural phase transition from zinc blende to rock salt structure, is consistent as those revealed from earlier reports. We find that short-range vdW attraction, long-range Coulomb repulsion, and short-range overlap repulsion in ZnX will contribute effectively to the mechanical properties and show similar results as those revealed from experiments.

Keywords: Phase transition, Elastic constants, Thermodynamical properties, Interionic interaction potential

IPC Code: H01L

 

Indian Journal of Pure & Applied Physics

Vol. 43, December 2005, pp. 952-957

 

Soft hydrothermal synthesis, morphology and characterization of
disodium nickel pyrophosphate crystals: Na2NiP2O7

M J Mahesh, G S Gopalakrishna* & K G Ashamanjari

Department of Studies in Geology, University of Mysore, Manasagangotri, Mysore 570 006

*E-mail: gopalakrish2004@yahoo.com

 

 

Received 19 November 2004; revised 17 February 2005; accepted 13 September 2005

Na2NiP2O7 crystals were synthesized by soft hydrothermal rout at moderate pressure-temperature conditions. Highest degree of crystallinity observed at critical concentration of initial components and beyond which the crystallinity collapse sharply to minimum. Solubility studies revealed positive thermal coefficient with relatively high enthalpy in H3PO4. Magnetic results indicated that it is a frequency dependent paramagnetic material.

Keywords: Hydrothermal synthesis, Solubility, Morphology, Magnetic property

IPC Code: C3/0B

 

Indian Journal of Pure & Applied Physics

Vol. 43, December 2005, pp. 958-963

 

 

 

Information entropy of isospectral Pöschl-Teller potential

 

Anil Kumar

Department of Physics, Panjab University, Chandigarh 160 014

Received 21 April 2005; accepted 1 September 2005

The position and momentum space information entropies of the ground state and first excited state of the Pöschl-Teller potential are exactly evaluated. Using isospectral Hamiltonian approach, a family of isospectral potentials, which have the same energy eigenvalues as that of the original potential has been constructed. The information entropy content in the first few levels of the isospectral potential has been calculated and it is shown that the information entropy content in each level can be re-arranged as a function of deformation parameter.

Keywords: Information entropy, Isospectral Hamiltonian

 

 

 

 

 

Indian Journal of Pure & Applied Physics

Vol. 43, December 2005, pp. 964-971

 

 

Electrical and optical properties of vacuum deposited ZnPc and CoPc thin films and application of variable range hopping model

K R Rajesh* & C S Menon

School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam 686 560, Kerala

*E-mail: rajthinfilms@yahoo.co.in

Received 4 January 2005;accepted 23 September 2005

Sandwich and planar structures have been fabricated using zinc phthalocyanine (ZnPc) and cobalt phthalocyanine as active layers and gold (Au) as electrodes by thermal evaporation method. The permittivity e is determined from the dependence of capacitance on film thickness. J-V characteristics of Au/ZnPc/Au and Au/CoPc/Au structures at room temperature have been performed. Thermally generated hole concentration p0, hole mobility μp , total trap concentration Nt and depth of the trap level have been estimated. The activation energies of the films have been determined from the Arrhenious plots of ln s versus 1000/T. Employing the variable range hopping model, hopping conduction parameters have been calculated. The absorption and reflectance spectra of ZnPc and CoPc thin films deposited at room temperature have been recorded in the spectral range 300-900 nm. The optical band gaps of the films have been determined from the a2 versus hn graph. The optical constants n and k have been found. The real and imaginary parts of the optical dielectric constant e1 and e2 have been calculated.

Keywords: Organic compounds, Thin films, Electrical properties, Optical properties

 

IPC Code: G01R, C07B 55/00

 

Indian Journal of Pure & Applied Physics

Vol. 43, December 2005, pp. 972-976

 

 

Dielectric tensor theory of electric field gradient in dilute transition metal based alloys: Application to vanadium alloys

 

B Pal

Department of Applied Sciences, C R State College of Engineering, Murthal (Sonepat) 131 039

and

J Singh

Department of Mathematics, Statistics and Physics, Punjab Agricultural, University, Ludhiana 141 004

Received 19 May 2005;revised 7 July 2005;accepted 12 August 2005

The electric field gradient (EFG) in dilute alloys consists of two contributions valence effect and size effect EFGs. In the estimation of valence effect EFG an electrostatic screening approach is used to evaluate impurity scattering potential in transition metal (TM) based alloys. The dielectric tensor is inverted using the mixed band scheme where s-electrons are represented in free electron approximation and d-electrons in simple tight binding approximation. In this scheme the exact expression is obtained for the excess impurity potential DV(r) which consists of isotropic and anisotropic parts. The latter is the manifestation of local field (LF) effects in TM based alloys. The numerical results for DV(r) are obtained for vanadium (V) alloys with Ti, Cr, Mn, Fe, Mo and W impurities using non-interacting model band structure. The size effect contribution to EFG is evaluated in the elastic continuum approach. The EFG is calculated for the above mentioned V-alloys including the LF effects. The calculated results for EFG are consistent with experimental predictions and suggest that both the valence and size effects are equally important to explain the experimental results.

Keywords : Electric field gradient , Point defects, Dielectric screening

IPC Code: G01R31/12

 

 

 

Indian Journal of Pure & Applied Physics

Vol. 43, December 2005, pp. 977-979

 

 

Study of depression of critical temperature of praseodymium doped
high Tc cuprates

R Gill* & P Singh*†

*DAV Institute of Engineering and Technology, Jalandhar, Punjab

Department of Physics, Addis Ababa university, Ethiopia

*Email: rgill12dec@rediffmail.com, psinghgbpup@yahoo.com

Received 3 March 2005; revised 22 September 2005; accepted 18 October 2005

The recent experimental observation of the substitution of praseodymium (Pr) in high transition temperature (Tc) superconducting Y123 compounds gives rise to very interesting properties, such as monotonic decrease of Tc with increase in Pr concentration which is not satisfactorily explained yet. The depression of Tc is due to hole filling/hole localization, magnetic pair breaking or some kind of disorder/dislocation is still not clear. The depression of Tc in Y1-xPrx Ba2Cu3O7-x has been explained using magnetic pair breaking, hole filling and disorder. It has been argued that the disorder along with hole filling is responsible for suppression of Tc and subsequently to lower order parameter (∆).

Keywords: High Tc cuprates, Praseodymium, Superconductivity

IPC Code: C04101:00, H01L39/00

 

 

Indian Journal of Pure & Applied Physics

Vol. 43, December 2005, pp. 980-988

 

  

Comparative study of power MOSFET device structures

Rakesh Vaid & Naresh Padha

Department of Physics & Electronics, University of Jammu, Jammu, 180 006

Received 19 April 2005; revised 13 October 2005; accepted 26 October 2005

In this paper, a comprehensive comparative study of various power MOSFET device structures designed and developed during the past decade has been presented. Various design issues related with power MOSFET have been studied to look into their on-resistance (RON) versus breakdown voltage (BV) trade off. Some of the existing power MOSFET device topologies have been compared with respect to their RON-BV. The study reveals that the low-doped n- epi region which gives square law relationship between RON and BV in the conventional power MOSFET is being constantly engineered for optimizing RON-BV trade-off subsequently led to many structural modifications in its basic design giving rise to many new power MOSFET device structures such as SSCFET (Silicon Semiconductor Corp. FET), JBSFET (Junction barrier controlled Schottky FET), superjunction (SJ)/COOLMOSTM transistor, semi-superjunction devices and FLIMOSFET (power MOSFETs with vertical floating islands) so as to overcome the conventional silicon limit.

Keywords: Power MOSFET, v-groove-MOS, Vertical double-diffused MOS, Trench power MOSFET, COOLMOSTM, Vertical Floating Islands MOS (FLIMOSFET)

IPC Code: H01L29/76

 

 

 

 


Annual Keyword Index

1-chloroisoquinoline

573

2-alkoxyethanols

259

2D-PSSD

567

2-methyl-8-nitroquinoline

573

Abelian field tensor

157

Absorption

743

Absorption coefficient

359

Absorption spectra

17

Acetone

844

Acetonitrile

542

Acoustic phonons

104

Acoustical parameters

849

Acrylonitrile

591

Activation energy

123,137,532,535

Active filters

799

Adaptation amplification

319

Adaptive optics

399

Adiabatic compressibility

755,849

Ageing

931

Alcohols

905

Aldehydes

295

Alumina

446

Amino acid

372

Aminobenzoesaeure

329

Ammonium dihydrogen phosphate

859

Amorphous semiconductors

630

Amplifier

714

Aniline

542

Anisotropy parameter

265

Antiferroelectric

859

Anti-hysteresis

386

Aperiodic solids

265

Aromatic ketones

591

Aromatic polyimide

684

Astronomical spectra

237

Atmospheric conductivity

679

Atomic frequency standards

221

Auroral acceleration region

377

Average light-effect

931

Axial field geometry

567

Backscattering shift

509

Band gap

609

Band tails

270

Barium lead borophosphate glasses

17

Barrier energy

532

Barrier height

184

Benzoyl glycine

863

Bhatia-thornton static structure

180

Bilayer

383

Binary liquid mixtures

345

Binary mixture

591,602

Biochip

7

Biosensors

7

Biquad filters

799

Biquadratic filters

142

Blue emission

522

Born Mayer potential

355

Boron complex

56

Brayton heat engine cycle

612

Brushite crystals

675

Budde-effect

931

Bulk modulus

654,759

Buried p-layer

697

Butyl alcohols

167

C27H25NS

167

Calcium stones

675

Carbon nanotubes

765,899

Carboxyl group

911

Cation

545

Cavity stabilized oscillator

221

CdPbS

609

Cellulose acetate

911

Chalcogenide glasses

630

Chalcogenides

109

Charge carrier density

432

Charge imbalance

873

Charge transfer

335

Citric acid

675

Cohesive energy

654

Cole-Cole plots

777

Comets  

237

Compressor

612

Computer simulation

24

Conducting polymer

787

Conductivity

446

Confinement

188

Conformational analysis

550

Convection

24

Convective flow

415

COOLMOSTM

980

Copper (II) complexes

509

Coulomb potential

355,654

Crystal growth

675

Crystal growth from solution

24

Crystal structure

859

Crystal structure of C27H25NS

167

Crystallite

446

Crystallization

192

Crystallographic analysis

668

CsnC60

654

Cu2+spin probe

833

Current feedback amplifier

636,714,799

Current follower

556

Current-mode filter

60,142

Current-mode universal filter

556

Cyclic voltammetry

921

Deformable and Tip-tilt mirrors

399

Dehydration

79

Density

602

Density functional theory

911

Depolarization

684

Device simulation

301

Diatomic molecules

427

Dielectric

859,863

Dielectric constant

123,446,777,926

Dielectric loss

287

Dielectric parameters

624

Dielectric properties

688

Dielectric relaxation

542,884

Dielectric relaxation time

39

Dielectric screening

972

Dielectric studies

550

Differential scanning calorimetry

363

Diffusion coefficient

180

Diffusion waves

596

Diffusivity

132

Dimers

743

Dimethylesulphoxide

844

Diode laser

517

Dioxane

844

Dip-coating

368

Dipolar motions

787

Dipolar orientation

207

Dipole moment

550

Dipole-dipole interactions

688

Discharge current

386

Diurnal variation

679

DL-serine

372

Doping

123

Doping profile

794

Dose rate

422

Dynamical charges

664

Dyon solutions

157

Elastic constants

355,660,939

Electrets

684

Electric field gradient

972

Electrical conductivity

123,137,535

Electrical properties

291,620,964

Electrochemical band gap

921

Electrodeless discharge

386

Electrodeposition

765

Electroluminescence

56,522

Electron paramagnetic resonance

273

Electronic materials

783

Electronic tenability

60

Electron-phonon interaction

279

Electrostatic ion cyclotron instability

377

Emission spectra

743

Energy of activation

39

Enthalpy

602

Epsilon

63

ESR absorption

833

Esters

905

Euclidean space

157

Excess free volumes

602

Excess internal pressure

602

Excitation energy

918

Excitation temperature

246

Eye safe laser

517

Fermi’s golden rule

63

Ferrites

291,688

Ferroelectric ceramics

884

F-G matrix

838

Field effect transistors

899

Filtering function

142

FLIMOSFET

301

Fluorescence excitation

743

Fluorescent spectra

918

Four terminal floating nullors

142

Fourier transform infrared spectrum

503

Fourier transform Raman spectrum

503

Franck-Condon factor

237,738

Free length

755,849

Free volume

755

FT Raman spectra

329,459,573

FTIR

79,459,573,838,863

FTIR spectroscopy

905,911

Gamma detector

494

Gamma ray spectrometry

815

Gamma spectroscopy

729

Gamma-ray irradiation

579

Gauge field theory

157

Gel growth

372

Genetic algorithm

691

Geological materials

777

Gerdien condenser

679

Glasses

192, 828,833

Green function

873

Grounded capacitor

60

Growth

765

Gunn oscillator

215

Hall coefficient

104

Harmonic oscillator potential

469

H-bonding

542

H-bonding complexes

743

Heat capacity

132

Heat transfer

24,415

Heavy ion reaction analyzer

567

Heavy ions

733

Heusler alloys

203

High field conduction

630

High power pump source

517

High purity gallium

783

High Tc cuprates

977

High temperature superconductor

439

High-frequency response

691

HOMO

921

HPGe detector

729

Humidity sensors

51

Hydrogen bond

167

Hydrogen bonding

905

Hydrogen diffusion

532

Hydrothermal synthesis

952

Hyperfine field distribution

203

Hysteresis

386

ICP-OES analysis

783

Ideality factor

184

IMPATT diode

794

Impedance spectroscopy

787

Indium tin oxide films

368

Induced dipole

750

Inductively coupled plasma

246

Infinitesimal deformation approach

668

Information Entropy

958

Infrared

329

Infrared and Raman spectra

821

Infrared spectra

89

Infrared spectroscopy

335, 828

Injection current

308

Insulators

308

Intensity

545

Interactions

750

Inter-diffusion

383

Interionic interaction potential

939

Intermetallic compound

532

Internal pressure

755

Inverted type equation of state

759

Ion production

679

IR absorption

833

IR spectra

192

Iron borate glasses

828

Isospectral Hamiltonian

738,958

Isothermal bulk modulus

759

Iterative algorithm

649

I-V characteristic

383

Judd-Ofelt parameters

17

Junction field effect transistor

705

KDP crystals

123

KnC60

654

Kudriavtsev’s theory

660

L X-ray satellites

83

Laser diode

596

Laser interferometer

319

Laser Raman spectra

838

Lattice constant

654

Lattice dynamics

109

Lattice energy

660

Lead silicate glasses

89

Levenberg-Marquardt method

649

LiBq4

56

Light quarks

469

Linear low-density polyethylene

287

Lippmann-Schwinger

63

Liquid alloy

180

Liquid KPb alloy

180

Liquid LiNa alloy

180

Logic operations

253

Longitudinal charges

664

Loss-cone distribution function

377

Low energy gamma ray spectrometry

494

LUMO

921

L-a  satellites

83

M2+-cation

869

Magnetic property

952

Magnetic susceptibility

119

Magnetization

545

Magneto- resistance

104,383

Manganites

273

Marble

777,815

Martensitic transformation

668

Mathematical Sciences

479

Metal substitution

463

MgO

759

Microhardness

863

Micro-strain

446

Microwave frequency signal

215

Microwave phase shifter

215

Microwave synthesis

221

Microwave tomography

649

Mixed spinel system

44,545

Mn-Zn

291

Mobility

931

Molecular interactions

167,849,905

Molecular mechanics

459

Molecular structure of C27H25NS

167

Molefractions

750

Monochalcogenides

355

Monomers

743

Morphology

952

Morse potential

355

Moseley plot

83

MOSFET

705

Mössbauer parameters

119

Mössbauer spectroscopy

119,203

Mössbauer study

44

Multilayer solar cell

432

Multiplexing

253

NaCl

759

n-alcohols

259

Nalidixic acid

503

Nanoelectronics

899

Nanostructure

188

Natural radioactivity

815

Neutron diffraction

279

Neutron energies

729

Ni0.5Zn0.5AlxFe2-xO4

44

NMR spin lattice

39

NMR spin lattice relaxation

295

Non radiative energy transfer

21

Non-eigenstate

63

Non-linear optical

838,859

Non-linear optical crystals

926

Non-linear optical properties

463

Non-radiative energy transfer

918

Normal coordinate analysis

329,503,573,821,838

n-type

270

n-type silicon

104

o-chlorophenol

345

OLED

56, 522

Operational transconductance amplifier

714

Optical absorption

192,359,579,833

Optical band gap

129,359,921

Optical characterization

854

Optical computation

253

Optical properties

620,964

Optical transmission

359

Optimization

691

Organic compounds

964

Organic NLO

863

Organic suspension

115

Orthorhombocity

279

OTAs

714

Oxidizing agent

291

P2O5

89

Parallel electric field

377

Parallel processing

253

Parasitic resistances

697

Passivation photoluminescence

188

PbO-SiO2 binary glass

89

Pelletron accelerator

733

Pendulum

479

Penning-effect

931

Perovskite

772

Perovskite synthesis

869

Phase separation

273

Phase transition

939

Phase variation

215

Phonon spectra

109

Phosphate

489

Phosphate glass

579,918

Photoconducting material

684

Photoconductivity

335,463,926

Photoluminescence

56,100,522

Photo-magneto-electrets

684

Photoplastic effect

34

Photoreceptor

319

Photothermal radiometry

596

Physiological sensors

7

Platicized polyvinyle chloride

132

Point contact

308

Point defects

972

Polar semiconductor

691

Polarization

688,772

Polaron

137

Pollycrystalline ceramics

869

Poly(vinylidene fluoride)

821

Polyaniline-polyvinyl alcohol

787

Polycarbonate

34

Polymers

287

Polyvinylidene isothermal immersion technique

207

Poole-Frenkel effect

630

Porous medium

415

Potassium dihydrogen phosphate

24

Potential energy curves

237,427

Potential energy distribution

329,503

Potential energy function

427

Power MOSFET

301,980

Praseodymium

977

Precipitation technique

609

Proton acceptor

542

Proton donor

542

Pseudo-binary alloy

359

Pseudopotential and Homo-Lumo states

188

Pulse height defect

733

Quantum dots

188

Quantum isotope effect

532

Quantum well

691

Quinohydrone

335

Radiative recombination

188

Radioactivity

422,489

Radiological hazard

489,815

Radionuclides

422,489

Radon

679

Radon progeny

679

RbnC60

654

r-Centroid

237,738

Refractive index

167

Refractive index sensor

854

Regenerator

612

Relative permittivity

287

Relaxation time

39,624,777,844

Relaxor

884

Resistivity

439

Resolution

319

RIB

567

Rutherford backscattering

383

SAlq

522

Saturation current

184

Scattering mechanisms

691

Schottky barrier

184

Schrödinger

63

Schrödinger equation

469

Scolecite

79

SDR

794

Se68Ge22M10

363

Se78Ge22

363

Second generation current conveyors

556

Selenium isotopes

729

Selenium thin films

129

Self-backgating effect

697

Semi-organic

926

Sensitizing Eu3+ by Dy3+

21

Series resistance

794

Shadöwgraphy

24

Shift & width

772

SiC-MESFET

697

Silent discharge

931

Silicon

270

Silicon detector

733

Silicon drift detectors

705

Silicon strain sensor

7

Single crystals

527

Smart sensors

7

Sn-119

203

Solar current

432

Sol-gel

368

Sol-gel process

51

Solid state reaction technique

869

Solubility

952

Solution growth

863

Solvent evaporation method

926

Sound velocity

755

Space charge

207

Space plasma

377

Spatial input encoding

253

Specific heat measurement

363

Spring constants

772

Squalane

167

Steady state conduction

207

Structural parameters

869

Structural properties

620

Substituted benzene

750

Substrate vibration

368

Sulphide phosphors

100

Superconductivity

977

Superconductor

279

Surface plasmon resonance

854

Synthesizer

221

Telescope

399

Ternary chalcogenide spinels

664

Ternary liquid system

167

TGA/DTA

372

Thermal conductivity

132

Thermodynamic functions

459

Thermodynamical properties

939

Thermo-economic function

612

Thermoelectric power

270, 527, 535

Thermoluminescence

100,192

Thick film

51

Thin films

630,964

Thin metal films

854

Thiourea

859

Thorium pnictides

109

Time evolution

63

Tin oxide

620

Trace metal impurities

783

Transconductance

714

Transient currents

207

Transition metals

579

Transition temperature

439

Transverse charges

664

Traps

308

Trench power MOSFET

980

Tungsten sulphoselenide

527

Tunnel injection

873

Turbine

612

Turbulence

399

Ultra fine diamond

115

Ultrasonic studies

167,259

Ultrasonic velocity

345,602,660,844,849

Ultrasonics

355,591

Uncertainty

319

Universal filter

142,714

Unsaturated oils

624

Uraniferrous geological samples

494

Van der Walls interactions

167

Vanillin

838

Vapour phase technique

527

VDMOSFET

301

Vertical double-diffused MOS

980

v-groov-MOS

980

Vibrational band assignment

459

Vibrational spectroscopy

821

Vicker’s hardness number

463, 863

Viscosity

602,755,844

Volatile hydride formation elements

246

Voltage/Current-mode circuits

799

Voltage-mode filter

636

Wafer metrology

596

Water

259

Wavefront sensor

399

Well-stabilized arc

246

Wertheim’s perturbation theory

265

Wetting films

115

X-band

794

X-band microwave

542

X-ray diffraction

44,119,279,372,545

X-ray K-absorption spectra

509

X-ray spectroscopy

705

Zeolites

79

Zinc phosphate glass

21

Zone refining

783

Annual Author Index

Abaddy A

489

Abhita P

329

Agarwal M K

527

Agarwal P

363

Aggarwal Sandeep Kr

697

Agrawal Shilpi

624

Ahmad S Naseem

714

Ahmed A M

535

 Al-Ashkar E A

246

Ali S S

246

Alim S

899

Alvi P A

899

Ambujam K

863

Anand D Prem

463

Ananda Kumari R

123

Anbarasan P M

308

Ansari Intikhab A

439

Arif Sanjid M

319

Arivazhagan M

573

Arul G

755

Ashan M Rafiqul

89

Avasthi D K

733

Aynyas Mahendra

109

Baba Basha D

237

Bajpai Rakesh

34

Bali L M

51

Bandyopadhyay B

649

Banerjee T

215

Barua S

567

Battisha I K

446

Behere S H

427

Bhahada K C

129

Bhatia S C

175

Bhatnagar Deepak

624

Bhatt S C

772

Bhattacharjee S K

172

Bhattacharya B

609

Birajdar S V

427

Chandra B P

34

Chandra Kailash

119

Chandra Mouli V

833

Chandra Subhas

56,522,921

Chandramani R

123

Chandrashekara M S

679

Chaudhary K P

319

Chauhan S

844

Chen Jincan

612

Chhantbar M C

688

Chickpatil M

869

Chinna Babu J

833

Das Archan Kumar

253

Das J J

567

Dash S K

287

Dashora J

132

Dashora P

132

Datta A N

649

De P

794

Deshpande M P

527

Dharamvir K

654

Dharmalingam K

905

Dharmaprakash S M

859

Dhawan S K

56,522,921

Dhoble S J

100

Dhondiyal Charu Ch

21,918

Digpratap S

759

Diwan P K

733

Doğan A

668

Dole B N

279

Dubey G P

175

Dubey R N

684

Dubey Ritesh Kumar

63

Dwivedi D K

265

Eid M A

246

Ekai R

432

El-Arabi A M

422

El-Rafaay M M

446

Farag I S Ahmed

446

Gajendiran V

815

George Joseph

620

Getinet Tesfaye

104

Ghoshal S K

188

Gill Karan Singh

188

Gill R

977

Gnanaprakasam S

459

Gopalakrishna G S

952

Gulam Mohammed M

863

Gunasekaran S

329,459,503,838

Gupta A

439

Gupta Ajay

44

Gupta G

132

Gupta Mridula

697

Gupta R S

697

Gupta Ritesh

697

Gupta Umesh

188

Gupta Vinay

854

H El-Batal Fatma

579

Haldar Subhasis

697

Havvatoglu Y

668

He Guo-zhu

729

Hemalatha G

849

Hemalatha J

815

Himanshu A K

787

Howe D A

221

Husain M

439

Hussain S

765

Ibrahim Medhat

911

Iqbal S Z

60,556,636,799

Jaya Santhi R

750

Jayarama A

859

Jegannathan G

494

Jha P K

109

Jhingan A

567

Jindal V K

654

Joarder R N

180

Joseph Ginson P

926

Joshi B C

21,918

Joshi D C

157

Joshi H H

688

Joshi M J

675

Joshi S K

509

Jyotsna T Savitha

591

K G Ashamanjari

952

Kadam C J

427

Kalaivani T

542

Kalita K

567

Kamal Diaa Eldin

911

Kamalasanan M N

56,522,921

Kanchan Dinesh K

137

Kannapan V

167,750,849

Karmakar Sanjib

172

Kataria S K

705

Kaurav N

939

Kaushal R S

479

Kaushik S C

612

Khan M R

714

Khanna K M

432

Khanna K N

265

Khare P K

207

Kinge R

939

Koireng R R

56

Kong Xiang-zhong

729

Kor S K

355

Koretz A Ya

115

Krishnakumar V

573

Krishnan S

542

Kumar A

363,630

Kumar A Suresh

17

Kumar Anil

738,938

Kumar C Nagaraja

738

Kumar K S

368

Kumar Lokendra

56

Kumar N

83,341

Kumar Pankaj

56,522,921

Kumar S

542

Kumar Sanjeev

609

Kumar Shyam

733

Kumari Uma

844

Kundu A

649

Kushwaha A K

664

Kushwaha S S

664

Kushwaha V S

630

Laha U

469

Lakshmi N

203

Lal K M

899

Lal Madan

291

Lal Roshan

44,119

Lawrence N

532

Lin Gouxing

612

Liu Zhong-jie

729

Luo Jun-hua

729

M Abo-Naf Sherief

579

M Ezzldin Fathy

579

Madhavan J

463

Madhavan N

567

Madhurima V

550

Mahesh M.J

952

Malik M A

142,873

Mandal S K

765

Manjubhashini A B

17

Manohara Murthy N

259,660

Mansingh Abhai

854

Math N N

743

Mathali Achamma John

184

Mattoo B A

873

Meenakshisundaram V

815

Mehan Navina

854

Mehrotra N K

39,295

Mehta N

363,630

Mehta Pourus

705

Menon C S

620,964

Menon V J

63

Mironov E M

115

Mishra K C

287

Mishra Ruchi

377

Mishra S K

399

Mishra S N

287

Mishra Vijay

705

Misra Aparna

56,522,921

Misra U D

83,341

Mittal S K

517

Modi B P

184

Modi K B

688

Mohamed M Gulam

926

Mohan D

399

Moinuddin

714

Mondal D

215

Mortuza M Golam

89

Moustafa H R

246

Mukhopadhyay Sourangshu

253

Mukolu A I

359

Munirathnam N R

783

Muralidhar K

24

Nada Abdallah

911

Naik L R

743

Nallasamy P

821

Naqvi H

899

Narasimhulu K

237

Nasrin M

319

Natarajan R K

503

Natarajan S

372,459

Nath P P

180

Nath S

567

Nazeer Ahammed Y

237

Oza A T

335

Padha Naresh

301,980

Pal A K

765

Pal B

972

Palaniappan L

755

Panchal Harshvadan R

137

Pandey Anil

203

Paramesh L

679

Parekh Bharat B

675

Parmar M N

527

Parveen B

60

Patel Ashok

335

Patel J B

527

Patel K D

184

Patel R G

335

Patel Vipul

335

Pathak K D

184

Patowary Kabita

172

Patrusheva T N

115

Pimpale Sushama S

386,931

Ponnambalam U

459

Ponnusamy S

838

Ponnusamy V

815

Potheher I Vedha

926

Prabhakar Vivek

24

Pragasam A Joseph Arul

463

Prakash T L

783

Prasad J

509

Prasad K Shiva

79

Prasad P S R

79

Prem Anand D

863

Qureshi M S

684

Raghupati P S

620

Raibagkar R L

869

Rajagopal E

259,660

Rajarajan K

863,926

Rajesh K R

964

Raju G Naga

192

Rama Gopal K

237

Rama Rao G V

602

Ramachandran D

602

Ramachandran E

372

Ramachandran K

905

RamaRao G V

345

Ramasamy V

815

Rambabu C

345,602

Rambabu U

783

Ranjan K

654

Rao R Balaji

192

Rather M F

556,636,799

Rathikha R

503

Ray D K

787

Reddy R C

783

Reddy R R

237

Ronno C K

432

Roshan Lal

828

Rotich S K

432

Sable Madan C

545

Sagayaraj P

463,863,926

Saha S K

399

Sahu Devendra K

207

Salvi S V

386,931

Sannappa J

679

Santhi R Jaya

167

Sanyal Sankar P

109

Sarkar B C

215

Sarkar S

215

Sarkar Subir Kumar

691

Sarma Viswanatha A

345

Sathyanarayanan L

494

Satyamurthy Padma

494

Satyanarayana N

591

Savarianandam A

459

Selvakumar S

463,863,926

Semwal B S

772

Sen Gupta A

221

Sengwa R J

777

Shah M C

509

Shah N A

60,142,556,636,799

Shah S S

279

Shahabuddin M

439

Shamkuwar N R

545

Sharma B K

517

Sharma D K

291

Sharma N D

44,119,828

Sharma N K

308

Sharma P

939

Sharma P K

273

Sharma S R

79

Sharma Sandhya

34

Sharma V

733

Shelke R M

427

Shrivastava B D

509

Shukla R K

51,363

Siddiqui M J

899

Singh A K

295

Singh Ajay Kumar

39

Singh Anupam

295

Singh Atul Kumar

415

Singh B P

759

Singh Devraj

355

Singh J

972

Singh K P

439

Singh Kuldeep

772

Singh M

129,291,383

Singh Manjeet

517

Singh P

977

Singh P K

517

Singh R

567

Singh R J

273

Singh R K

939

Singh V R

7

Singh Vijay

100

Singh Vinod

157

Singhal R P

319

Sinha K K

884

Sinha T P

787

Siva Rama Krishna J

345

Siva Sankar Reddy L

237

Sivagurunathan P

905

Solanki G K

527

Soni A

777

Sreekumar K

596

Sreenivas K

854,884

Srinivasan S

459

Srivastava A K

355

Srivastava Atul

24

Srivastava K K P

884

Srivastava R

184

Srivastava R K

207

Srivastava Ritu

921

Stalin Mano Gibson M

532

Stella M Mary

368

Subrahmanyam M

660

Sugathan P

567

Suman

44

Suresh S

833

Sushil K

759

Swain B B

287

Syal V K

844

Syamala D

503

Talukdar A N

172

Taneja S P

44,119

Tiwari M S

377

Tiwari Manoj

100

Tiwari R S

363

Torongey P K

432

Tripathi B V

157

Tripathi D N

63

Tripathi N

175

Trivedi Parimal

335

Trivedi U N

688

Tyagi Aarti

684

Tyagi S K

612

Uddin M Alfaz

89

Vaid Rakesh

301,980

Vaidyan V K

368

Vaish S K

295

Varshney Dinesh

939

Varughese T

567

Veeraiah N

192

Venkata Ramana G

259

Venugopalan K

203

Verma Pavan Kumar

265

Verma S

567

Verma Sunil

24

Vijay Y K

129,383

Viji V R

368

Viswanatha Sarma A

602

Vyas R K

509

Vyawahare S K

545

Wadhawan V  K

24

Workalemahu Bantikassegn

270

Yadav B C

51